SSM3J112TU,LF
MOSFET P-CH 30V 1.1A UFM
Transistors Fets Mosfets Single
3-SMD, Flat Leads
Active
Price available on request
MOQ: 3000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM3J112TU,LF |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 390mOhm @ 500mA, 10V |
| Vgs(th) (Max) | 1.8V @ 100µA |
| Input Capacitance (Ciss) | 86 pF @ 15 V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | UFM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM3J112TU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-SMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 390mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM3J112TU,LF
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.8V @ 100µA |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 500mA, 10V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 86 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
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