SQ2360EES-T1-GE3
MOSFET N-CH 60V 4.4A TO236
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SQ2360EES-T1-GE3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 85mOhm @ 6A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 370 pF @ 25 V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SQ2360EES-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SQ2360EES-T1-GE3
Alternatives & Replacements
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CPH3455-TL-W
MOSFET N-CH 35V 3A 3CPH
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 370 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
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