SISS60DN-T1-GE3
MOSFET N-CH 30V 50.1/181.8A PPAK
Transistors Fets Mosfets Single
PowerPAK® 1212-8S
TrenchFET® Gen IV
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SISS60DN-T1-GE3 |
| Package / Case | PowerPAK® 1212-8S |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 1.31mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 85.5 nC @ 10 V |
| Input Capacitance (Ciss) | 3960 pF @ 15 V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PowerPAK® 1212-8S |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SISS60DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8S package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.31mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SISS60DN-T1-GE3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +16V, -12V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Body) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.31mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.1W (Ta), 65.8W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 85.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3960 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 50.1A (Ta), 181.8A (Tc) |
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