SISF00DN-T1-GE3
MOSFET DUAL N-CH 30V POWERPAK 12
Transistors Fets Mosfets Arrays
PowerPAK® 1212-8SCD
TrenchFET® Gen IV
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SISF00DN-T1-GE3 |
| Package / Case | PowerPAK® 1212-8SCD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 5mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.1V @ 250µA |
| Gate Charge (Qg) | 53nC @ 10V |
| Input Capacitance (Ciss) | 2700pF @ 15V |
| Power Dissipation (Max) | 69.4W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8SCD |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SISF00DN-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® 1212-8SCD package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SISF00DN-T1-GE3
Alternatives & Replacements
View All →SISF04DN-T1-GE3
MOSFET DUAL N-CH 30V PPAK 1212-8
SISF06DN-T1-GE3
COMMON-DRAIN DUAL N-CH 30V (S1-S
SISF02DN-T1-GE3
MOSFET DUAL N-CH 25V 1212-8
SISF20DN-T1-GE3
MOSFET DL N-CH 60V PPK 1212-8SCD
All Technical Specifications
| FET Type | 2 N-Channel (Dual) Common Drain |
| FET Feature | Standard |
| Power - Max | 69.4W (Tc) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 53nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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