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Vishay SiliconixPowerPAK® SC-75-6L DualRoHS

SIB914DK-T1-GE3

MOSFET 2N-CH 8V 1.5A PPAK SC75-6

SIB914DK-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Arrays

Package

PowerPAK® SC-75-6L Dual

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIB914DK-T1-GE3
Package / CasePowerPAK® SC-75-6L Dual
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)8V
Rds On (Max)113mOhm @ 2.5A, 4.5V
Vgs(th) (Max)800mV @ 250µA
Gate Charge (Qg)2.6nC @ 5V
Input Capacitance (Ciss)125pF @ 4V
Power Dissipation (Max)3.1W
Supplier Device PackagePowerPAK® SC-75-6L Dual
RoHSRoHS
Part StatusObsolete

Application & Notes

SIB914DK-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 8V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-75-6L Dual package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 113mOhm @ 2.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max3.1W
Vgs(th) (Max) @ Id800mV @ 250µA
Rds On (Max) @ Id, Vgs113mOhm @ 2.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs2.6nC @ 5V
Drain to Source Voltage (Vdss)8V
Input Capacitance (Ciss) (Max) @ Vds125pF @ 4V
Current - Continuous Drain (Id) @ 25°C1.5A

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