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Vishay SiliconixPowerPAK® SC-70-6RoHS

SIA430DJ-T1-GE3

MOSFET N-CH 20V 12A PPAK SC70-6

SIA430DJ-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SC-70-6

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIA430DJ-T1-GE3
Package / CasePowerPAK® SC-70-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)13.5mOhm @ 7A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)18 nC @ 10 V
Input Capacitance (Ciss)800 pF @ 10 V
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePowerPAK® SC-70-6
RoHSRoHS
Part StatusObsolete

Application & Notes

SIA430DJ-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-70-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13.5mOhm @ 7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
Power Dissipation (Max)3.5W (Ta), 19.2W (Tc)
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)

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