Vishay Siliconix4-XFBGARoHS
SI8819EDB-T2-E1
MOSFET P-CH 12V 2.9A 4MICRO FOOT
Category
Subcategory
Transistors Fets Mosfets Single
Package
4-XFBGA
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI8819EDB-T2-E1 |
| Package / Case | 4-XFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 80mOhm @ 1.5A, 3.7V |
| Vgs(th) (Max) | 900mV @ 250µA |
| Gate Charge (Qg) | 17 nC @ 8 V |
| Input Capacitance (Ciss) | 650 pF @ 6 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Drive Voltage | 1.5V, 3.7V |
| Supplier Device Package | 4-MICRO FOOT® (0.8x0.8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI8819EDB-T2-E1 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80mOhm @ 1.5A, 3.7V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI8819EDB-T2-E1
Alternatives & Replacements
View All →All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 1.5A, 3.7V |
| Power Dissipation (Max) | 900mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 8 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 3.7V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
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