SI6423DQ-T1-E3
MOSFET P-CH 12V 8.2A 8TSSOP
Transistors Fets Mosfets Single
8-TSSOP (0.173", 4.40mm Width)
TrenchFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI6423DQ-T1-E3 |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 8.5mOhm @ 9.5A, 4.5V |
| Vgs(th) (Max) | 800mV @ 400µA |
| Gate Charge (Qg) | 110 nC @ 5 V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 8-TSSOP |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI6423DQ-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-TSSOP (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.5mOhm @ 9.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI6423DQ-T1-E3
Alternatives & Replacements
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SMALL SIGNAL N-CHANNEL MOSFET
UPA1820GR-9JG-E1-A
MOSFET N-CH 20V 12A 8TSSOP
SI6433DQ
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 800mV @ 400µA |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 9.5A, 4.5V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta) |
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