SI4774DY-T1-GE3
MOSFET N-CHANNEL 30V 16A 8SO
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
SkyFET®, TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI4774DY-T1-GE3 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TA) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 9.5mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.3V @ 1mA |
| Gate Charge (Qg) | 14.3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1025 pF @ 15 V |
| Power Dissipation (Max) | 5W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI4774DY-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.5mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI4774DY-T1-GE3
Alternatives & Replacements
View All →FDS8878
POWER FIELD-EFFECT TRANSISTOR, 1
FDS8876
MOSFET N-CH 30V 12.5A 8SOIC
FDS7066ASN3
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FDS7760A
MOSFET N-CH 30V 15A 8SOIC
HUF75631SK8T
MOSFET N-CH 100V 5.5A 8SOIC
FDFS2P753Z
MOSFET P-CH 30V 3A 8SOIC
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Body) |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 10A, 10V |
| Power Dissipation (Max) | 5W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 14.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1025 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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