PartsCube Global

Vishay Siliconix8-SOIC (0.154", 3.90mm Width)RoHS

SI4628DY-T1-GE3

MOSFET N-CH 30V 38A 8SO

SI4628DY-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

8-SOIC (0.154", 3.90mm Width)

Series

SkyFET®, TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandVishay Siliconix
ModelSI4628DY-T1-GE3
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3mOhm @ 20A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)87 nC @ 10 V
Input Capacitance (Ciss)3450 pF @ 15 V
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-SOIC
RoHSRoHS
Part StatusObsolete

Application & Notes

SI4628DY-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs3mOhm @ 20A, 10V
Power Dissipation (Max)3.5W (Ta), 7.8W (Tc)
Gate Charge (Qg) (Max) @ Vgs87 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds3450 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C38A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.