SI4108DY-T1-GE3
MOSFET N-CH 75V 20.5A 8-SOIC
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI4108DY-T1-GE3 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 75 V |
| Rds On (Max) | 9.8mOhm @ 13.8A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 54 nC @ 10 V |
| Input Capacitance (Ciss) | 2100 pF @ 38 V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI4108DY-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.8mOhm @ 13.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI4108DY-T1-GE3
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 9.8mOhm @ 13.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 75 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 38 V |
| Current - Continuous Drain (Id) @ 25°C | 20.5A (Tc) |
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