SI3475DV-T1-E3
MOSFET P-CH 200V 950MA 6TSOP
Transistors Fets Mosfets Single
SOT-23-6 Thin, TSOT-23-6
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI3475DV-T1-E3 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 1.61Ohm @ 900mA, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 18 nC @ 10 V |
| Input Capacitance (Ciss) | 500 pF @ 50 V |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | 6-TSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI3475DV-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.61Ohm @ 900mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI3475DV-T1-E3
Alternatives & Replacements
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CPH6355-TL-W
SINGLE P-CHANNEL POWER MOSFET, -
FDC655AN
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SI3457DV
SMALL SIGNAL FIELD-EFFECT TRANSI
NTGD4169FT1G
MOSFET N-CH 30V 2.6A 6TSOP
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.61Ohm @ 900mA, 10V |
| Power Dissipation (Max) | 2W (Ta), 3.2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) |
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