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Vishay SiliconixSOT-23-6 Thin, TSOT-23-6RoHS

SI3460DV-T1-E3

MOSFET N-CH 20V 5.1A 6TSOP

SI3460DV-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI3460DV-T1-E3
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)27mOhm @ 5.1A, 4.5V
Vgs(th) (Max)450mV @ 1mA (Min)
Gate Charge (Qg)20 nC @ 4.5 V
Power Dissipation (Max)1.1W (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device Package6-TSOP
RoHSRoHS
Part StatusObsolete

Application & Notes

SI3460DV-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 5.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id450mV @ 1mA (Min)
Rds On (Max) @ Id, Vgs27mOhm @ 5.1A, 4.5V
Power Dissipation (Max)1.1W (Ta)
Gate Charge (Qg) (Max) @ Vgs20 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.1A (Ta)

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