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Vishay SiliconixSOT-23-6 Thin, TSOT-23-6RoHS

SI3443DDV-T1-GE3

MOSFET P-CH 20V 4A/5.3A 6TSOP

SI3443DDV-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

TrenchFET®

Status

Active

Datasheet

View Datasheet ↗

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MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI3443DDV-T1-GE3
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)47mOhm @ 4.5A, 4.5V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)30 nC @ 8 V
Input Capacitance (Ciss)970 pF @ 10 V
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device Package6-TSOP
RoHSRoHS
Part StatusActive

Application & Notes

SI3443DDV-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 47mOhm @ 4.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for SI3443DDV-T1-GE3

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

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BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

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onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs47mOhm @ 4.5A, 4.5V
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs30 nC @ 8 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds970 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta), 5.3A (Tc)

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