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Vishay SiliconixSOT-23-6 Thin, TSOT-23-6RoHS

SI3442CDV-T1-GE3

MOSFET N-CH 20V 8A 6TSOP

SI3442CDV-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

TrenchFET®

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI3442CDV-T1-GE3
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)27mOhm @ 6.5A, 10V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)14 nC @ 10 V
Input Capacitance (Ciss)335 pF @ 10 V
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Drive Voltage2.5V, 10V
Supplier Device Package6-TSOP
RoHSRoHS
Part StatusObsolete

Application & Notes

SI3442CDV-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 6.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for SI3442CDV-T1-GE3

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

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onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs27mOhm @ 6.5A, 10V
Power Dissipation (Max)1.7W (Ta), 2.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds335 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)

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