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Vishay SiliconixTO-236-3, SC-59, SOT-23-3RoHS

SI2371EDS-T1-GE3

MOSFET P-CH 30V 4.8A SOT-23

SI2371EDS-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

TrenchFET®

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI2371EDS-T1-GE3
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)45mOhm @ 3.7A, 10V
Vgs(th) (Max)1.5V @ 250µA
Gate Charge (Qg)35 nC @ 10 V
Power Dissipation (Max)1W (Ta), 1.7W (Tc)
Drive Voltage2.5V, 10V
Supplier Device PackageSOT-23
RoHSRoHS
Part StatusActive

Application & Notes

SI2371EDS-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 3.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 3.7A, 10V
Power Dissipation (Max)1W (Ta), 1.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C4.8A (Tc)

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