SI2327DS-T1-E3
MOSFET P-CH 200V 380MA SOT23-3
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI2327DS-T1-E3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 2.35Ohm @ 500mA, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 510 pF @ 25 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | SOT-23-3 (TO-236) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI2327DS-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.35Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI2327DS-T1-E3
Alternatives & Replacements
View All →MMFTP84
MOSFET P-CH 60V 130MA SOT23-3
CPH3355-TL-H
CPH3355 - SINGLE P-CHANNEL POWER
2N7002K
MOSFET SOT-23 N Channel 60V
PMV22EN,215
MOSFET N-CH 30V 5.2A TO236AB
CPH3350-TL-W
MOSFET P-CH 20V 3A 3CPH
CPH3455-TL-W
MOSFET N-CH 35V 3A 3CPH
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 2.35Ohm @ 500mA, 10V |
| Power Dissipation (Max) | 750mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) |
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