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Vishay SiliconixTO-236-3, SC-59, SOT-23-3RoHS

SI2305ADS-T1-E3

MOSFET P-CH 8V 5.4A SOT23-3

SI2305ADS-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI2305ADS-T1-E3
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)8 V
Rds On (Max)40mOhm @ 4.1A, 4.5V
Vgs(th) (Max)800mV @ 250µA
Gate Charge (Qg)15 nC @ 4.5 V
Input Capacitance (Ciss)740 pF @ 4 V
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-23-3 (TO-236)
RoHSRoHS
Part StatusObsolete

Application & Notes

SI2305ADS-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 4.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id800mV @ 250µA
Rds On (Max) @ Id, Vgs40mOhm @ 4.1A, 4.5V
Power Dissipation (Max)960mW (Ta), 1.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Drain to Source Voltage (Vdss)8 V
Input Capacitance (Ciss) (Max) @ Vds740 pF @ 4 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5.4A (Tc)

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