PartsCube Global

Vishay SiliconixSC-70, SOT-323RoHS

SI1304BDL-T1-E3

MOSFET N-CH 30V 900MA SC70-3

SI1304BDL-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SC-70, SOT-323

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandVishay Siliconix
ModelSI1304BDL-T1-E3
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)270mOhm @ 900mA, 4.5V
Vgs(th) (Max)1.3V @ 250µA
Gate Charge (Qg)2.7 nC @ 4.5 V
Input Capacitance (Ciss)100 pF @ 15 V
Power Dissipation (Max)340mW (Ta), 370mW (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackageSC-70-3
RoHSRoHS
Part StatusObsolete

Application & Notes

SI1304BDL-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 270mOhm @ 900mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.3V @ 250µA
Rds On (Max) @ Id, Vgs270mOhm @ 900mA, 4.5V
Power Dissipation (Max)340mW (Ta), 370mW (Tc)
Gate Charge (Qg) (Max) @ Vgs2.7 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds100 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C900mA (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.