SI1078X-T1-GE3
MOSFET N-CH 30V 1.02A SOT563F
Transistors Fets Mosfets Single
SOT-563, SOT-666
TrenchFET®
Active
Price available on request
MOQ: 6000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI1078X-T1-GE3 |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 142mOhm @ 1A, 10V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 110 pF @ 15 V |
| Power Dissipation (Max) | 240mW (Tc) |
| Drive Voltage | 2.5V, 10V |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI1078X-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 142mOhm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI1078X-T1-GE3
Alternatives & Replacements
View All →SCH1331-S-TL-H
MOSFET P-CH 12V 3A SCH6
SCH1436-TL-H
MOSFET N-CH 30V 1.8A 6SCH
SCH1343-TL-H
MOSFET P-CH 20V 3.5A 6SCH
SCH1345-TL-H
MOSFET P-CH 20V 4.5A SOT563/SCH6
SCH1330-TL-H
MOSFET P-CH 20V 1.5A 6SCH
SCH1337-TL-H
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 142mOhm @ 1A, 10V |
| Power Dissipation (Max) | 240mW (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.02A (Tc) |
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