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Vishay SiliconixSOT-563, SOT-666RoHS

SI1073X-T1-GE3

MOSFET P-CH 30V 0.98A SC89-6

SI1073X-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

SOT-563, SOT-666

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI1073X-T1-GE3
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)173mOhm @ 980mA, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)9.45 nC @ 10 V
Input Capacitance (Ciss)265 pF @ 15 V
Power Dissipation (Max)236mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-89 (SOT-563F)
RoHSRoHS
Part StatusObsolete

Application & Notes

SI1073X-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 173mOhm @ 980mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs173mOhm @ 980mA, 10V
Power Dissipation (Max)236mW (Ta)
Gate Charge (Qg) (Max) @ Vgs9.45 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds265 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C980mA (Ta)

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