SGD02N60BUMA1
IGBT 600V 6A 30W TO252-3
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Last Time Buy
$0.50 / unit (market reference)
MOQ: 599 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | SGD02N60BUMA1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 30 W |
| Supplier Device Package | PG-TO252-3-11 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
SGD02N60BUMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGD02N60BUMA1
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 14 nC |
| Power - Max | 30 W |
| Test Condition | 400V, 2A, 118Ohm, 15V |
| Switching Energy | 64µJ |
| Td (on/off) @ 25°C | 20ns/259ns |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2A |
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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