SGB15N60HSATMA1
IGBT 600V 27A 138W TO263-3
Transistors Igbts Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | SGB15N60HSATMA1 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 138 W |
| Supplier Device Package | PG-TO263-3-2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SGB15N60HSATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SGB15N60HSATMA1
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All Technical Specifications
| IGBT Type | NPT |
| Input Type | Standard |
| Gate Charge | 80 nC |
| Power - Max | 138 W |
| Test Condition | 400V, 15A, 23Ohm, 15V |
| Switching Energy | 530µJ |
| Td (on/off) @ 25°C | 13ns/209ns |
| Vce(on) (Max) @ Vge, Ic | 3.15V @ 15V, 15A |
| Current - Collector (Ic) (Max) | 27 A |
| Current - Collector Pulsed (Icm) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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