What is the minimum order quantity for SFT1342-W?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

How long does shipping take for SFT1342-W?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for SFT1342-W?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for SFT1342-W?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

onsemiTO-251-3 Short Leads, IPak, TO-251AARoHS

SFT1342-W

Name: SFT1342-W
Brand: onsemi
SKU: SFT1342-W

MOSFET P-CH 60V 12A TP

Parameters

Parameter	Value
Brand	onsemi
Model	SFT1342-W
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type	Through Hole
Operating Temperature	150°C (TJ)
FET Type	P-Channel
Drain to Source Voltage (Vdss)	60 V
Rds On (Max)	62mOhm @ 6A, 10V
Gate Charge (Qg)	26 nC @ 10 V
Input Capacitance (Ciss)	1150 pF @ 20 V
Power Dissipation (Max)	1W (Ta), 15W (Tc)
Drive Voltage	4V, 10V
Supplier Device Package	IPAK/TP
RoHS	RoHS
Part Status	Obsolete

Application & Notes

SFT1342-W by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 62mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs	62mOhm @ 6A, 10V
Power Dissipation (Max)	1W (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)

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