PartsCube Global

Renesas Electronics America IncTO-243AARoHS

RQK0609CQDQS#H1

MOSFET N-CH 60V 4A UPAK

Subcategory

Transistors Fets Mosfets Single

Package

TO-243AA

Status

Obsolete

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelRQK0609CQDQS#H1
Package / CaseTO-243AA
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)100mOhm @ 2A, 4.5V
Vgs(th) (Max)1.4V @ 1mA
Gate Charge (Qg)5 nC @ 4.5 V
Input Capacitance (Ciss)470 pF @ 10 V
Power Dissipation (Max)1.5W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackageUPAK
RoHSRoHS
Part StatusObsolete

Application & Notes

RQK0609CQDQS#H1 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 1mA
Rds On (Max) @ Id, Vgs100mOhm @ 2A, 4.5V
Power Dissipation (Max)1.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs5 nC @ 4.5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.