RQK0607AQDQS#H1
MOSFET N-CH 60V 2.4A UPAK
Transistors Fets Mosfets Single
TO-243AA
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RQK0607AQDQS#H1 |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 270mOhm @ 1.2A, 4.5V |
| Gate Charge (Qg) | 2 nC @ 4.5 V |
| Input Capacitance (Ciss) | 170 pF @ 10 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | UPAK |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
RQK0607AQDQS#H1 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 270mOhm @ 1.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQK0607AQDQS#H1
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 4.5V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
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