RQJ0305EQDQS#H1
MOSFET P-CH 30V 3.4A UPAK
Transistors Fets Mosfets Single
TO-243AA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RQJ0305EQDQS#H1 |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 140mOhm @ 1.7A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 1mA |
| Gate Charge (Qg) | 3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 330 pF @ 10 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | UPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RQJ0305EQDQS#H1 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 1.7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQJ0305EQDQS#H1
Alternatives & Replacements
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RHP020N06T100
MOSFET N-CH 60V 2A MPT3
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +8V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.7A, 4.5V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta) |
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