RQJ0303PGDQA#H6
MOSFET P-CH 30V 3.3A 3MPAK
Transistors Fets Mosfets Single
TO-236-3, SC-59, SOT-23-3
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RQJ0303PGDQA#H6 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 68mOhm @ 1.6A, 10V |
| Gate Charge (Qg) | 12 nC @ 10 V |
| Input Capacitance (Ciss) | 625 pF @ 10 V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 3-MPAK |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
RQJ0303PGDQA#H6 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 68mOhm @ 1.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQJ0303PGDQA#H6
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 68mOhm @ 1.6A, 10V |
| Power Dissipation (Max) | 800mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
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