RQA0009SXAQS#H1
MOSFET N-CH 16V 3.2A UPAK
Transistors Fets Mosfets Single
TO-243AA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RQA0009SXAQS#H1 |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 16 V |
| Vgs(th) (Max) | 800mV @ 1mA |
| Input Capacitance (Ciss) | 76 pF @ 0 V |
| Power Dissipation (Max) | 15W (Tc) |
| Supplier Device Package | UPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RQA0009SXAQS#H1 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 16 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-243AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQA0009SXAQS#H1
Alternatives & Replacements
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BSS87,115
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VN2450N8-G
MOSFET N-CH 500V 250MA TO243AA
ZXMN10A07ZTA
MOSFET N-CH 100V 1A SOT89-3
RHP020N06T100
MOSFET N-CH 60V 2A MPT3
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 800mV @ 1mA |
| Power Dissipation (Max) | 15W (Tc) |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 76 pF @ 0 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
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