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Rohm SemiconductorSOT-23-6 Thin, TSOT-23-6RoHS

RQ6E050ATTCR

MOSFET P-CH 30V 5A TSMT6

RQ6E050ATTCR by Rohm Semiconductor
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Status

Active

$0.54 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRohm Semiconductor
ModelRQ6E050ATTCR
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)27mOhm @ 5A, 10V
Vgs(th) (Max)2.5V @ 1mA
Gate Charge (Qg)20.8 nC @ 10 V
Input Capacitance (Ciss)940 pF @ 15 V
Power Dissipation (Max)1.25W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageTSMT6 (SC-95)
RoHSRoHS
Part StatusActive

Application & Notes

RQ6E050ATTCR by Rohm Semiconductor is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 27mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA
Rds On (Max) @ Id, Vgs27mOhm @ 5A, 10V
Power Dissipation (Max)1.25W (Ta)
Gate Charge (Qg) (Max) @ Vgs20.8 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

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