RN2906FE,LF(CT
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
Transistors Bipolar Bjt Arrays Pre Biased
SOT-563, SOT-666
Active
Price available on request
MOQ: 4000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN2906FE,LF(CT |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | ES6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN2906FE,LF(CT by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-563, SOT-666 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN2906FE,LF(CT
Alternatives & Replacements
View All →NSBC123JPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
EMD5DXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563
EMF5XV6T5
TRANS NPN PREBIAS/PNP 0.5W SOT56
NSBC114EDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563
PEMH14,115
TRANS PREBIAS 2NPN 50V SOT666
NSBC143EPDXV6T1
TRANS PREBIAS NPN/PNP SOT563
All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 200MHz |
| Resistor - Emitter Base (R2) | 47kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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