RN1701JE(TE85L,F)
TRANS 2NPN PREBIAS 0.1W ESV
Transistors Bipolar Bjt Arrays Pre Biased
SOT-553
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | RN1701JE(TE85L,F) |
| Package / Case | SOT-553 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 100mW |
| Supplier Device Package | ESV |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RN1701JE(TE85L,F) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-553 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RN1701JE(TE85L,F)
Alternatives & Replacements
View All →EMC2DXV5T1
TRANS PREBIAS NPN/PNP SOT553
EMG2DXV5T1
TRANS 2NPN PREBIAS 0.23W SOT553
NSTB1002DXV5T1G
TRANS PREBIAS 1NPN 1PNP SOT553
EMC2DXV5T1G
TRANS PREBIAS NPN/PNP 50V SOT553
EMC4DXV5T1G
TRANS PREBIAS NPN/PNP 50V SOT553
EMC5DXV5T1
TRANS PREBIAS NPN/PNP SOT553
All Technical Specifications
| Power - Max | 100mW |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Resistor - Base (R1) | 4.7kOhms |
| Frequency - Transition | 250MHz |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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