RM48N100D3
MOSFET N-CHANNEL 100V 48A 8DFN
Transistors Fets Mosfets Single
8-PowerVDFN
Active
Price available on request
MOQ: 25000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rectron USA |
| Model | RM48N100D3 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 13.6mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Input Capacitance (Ciss) | 3280 pF @ 50 V |
| Power Dissipation (Max) | 61W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-DFN-EP (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RM48N100D3 by Rectron USA is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13.6mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RM48N100D3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +20V, -12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 13.6mOhm @ 20A, 10V |
| Power Dissipation (Max) | 61W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3280 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
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