RJP60F5DPK-01#T0
IGBT 600V 80A 260.4W
Transistors Igbts Single
TO-220-3 Full Pack
Active
$3.89 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJP60F5DPK-01#T0 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 260.4 W |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJP60F5DPK-01#T0 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJP60F5DPK-01#T0
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 74 nC |
| Power - Max | 260.4 W |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Td (on/off) @ 25°C | 53ns/90ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 40A |
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 160 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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