RJP6085DPN-00#T2
IGBT 600V 40A TO220AB
Transistors Igbts Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJP6085DPN-00#T2 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 178.5 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJP6085DPN-00#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJP6085DPN-00#T2
Alternatives & Replacements
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IRGB4B60KD1PBF
IRGB4B60K - IGBT WITH ULTRAFAST
SGP40N60UFTU
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SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
All Technical Specifications
| Input Type | Standard |
| Power - Max | 178.5 W |
| Vce(on) (Max) @ Vge, Ic | 3.5V @ 15V, 40A |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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