RJP5001APP-M0#T2
IGBT 500V TO-220FN
Transistors Igbts Single
TO-220-3 Full Pack
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJP5001APP-M0#T2 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 45 W |
| Supplier Device Package | TO-220FL |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJP5001APP-M0#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJP5001APP-M0#T2
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All Technical Specifications
| Input Type | Standard |
| Power - Max | 45 W |
| Test Condition | 300V, 300A, 30Ohm, 12V |
| Td (on/off) @ 25°C | 100ns/200ns |
| Vce(on) (Max) @ Vge, Ic | 10V @ 12V, 300A |
| Current - Collector Pulsed (Icm) | 300 A |
| Voltage - Collector Emitter Breakdown (Max) | 500 V |
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