RJM0603JSC-00#13
MOSFET 3N/3P-CH 60V 20A HSOP
Transistors Fets Mosfets Arrays
20-SOIC (0.433", 11.00mm Width) Exposed Pad
Automotive, AEC-Q101
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJM0603JSC-00#13 |
| Package / Case | 20-SOIC (0.433", 11.00mm Width) Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 60V |
| Rds On (Max) | 20mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 43nC @ 10V |
| Input Capacitance (Ciss) | 2600pF @ 10V |
| Power Dissipation (Max) | 54W |
| Supplier Device Package | 20-HSOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJM0603JSC-00#13 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 60V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 20-SOIC (0.433", 11.00mm Width) Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJM0603JSC-00#13
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All Technical Specifications
| FET Type | 3 N and 3 P-Channel (3-Phase Bridge) |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 54W |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
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