RJK60S4DPP-E0#T2
MOSFET N-CH 600V 16A TO220FP
Transistors Fets Mosfets Single
TO-220-3 Full Pack
Obsolete
$4.26 / unit (market reference)
MOQ: 71 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK60S4DPP-E0#T2 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 290mOhm @ 8A, 10V |
| Gate Charge (Qg) | 18 nC @ 10 V |
| Input Capacitance (Ciss) | 988 pF @ 25 V |
| Power Dissipation (Max) | 29.9W (Tc) |
| Supplier Device Package | TO-220FP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK60S4DPP-E0#T2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 290mOhm @ 8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK60S4DPP-E0#T2
Alternatives & Replacements
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MOSFET N-CH 600V 2.4A TO220FP
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MOSFET P-CH 60V 12A TO220ML
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MOSFET N-CH 500V 8.5A TO220FP
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Super Junction |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 8A, 10V |
| Power Dissipation (Max) | 29.9W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 988 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
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