RJK6002DPD-WS#J2
MOSFET N-CH 600V 2A MP3A
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJK6002DPD-WS#J2 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 6.8Ohm @ 1A, 10V |
| Vgs(th) (Max) | 4.5V @ 1mA |
| Gate Charge (Qg) | 6.2 nC @ 10 V |
| Input Capacitance (Ciss) | 165 pF @ 25 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | MP-3A |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK6002DPD-WS#J2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.8Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK6002DPD-WS#J2
Alternatives & Replacements
View All →SFT1423-S-TL-E
MOSFET N-CH 500V 2A TP-FA
NTD23N03RT4G
MOSFET N-CH 25V 3.8A/17.1A DPAK
FDD8780
POWER FIELD-EFFECT TRANSISTOR, 3
NTD4815NHT4G
MOSFET N-CH 30V 6.9A/35A DPAK
NTD70N03RT4G
MOSFET N-CH 25V 10A/32A DPAK
FDD8451
POWER FIELD-EFFECT TRANSISTOR, 9
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 6.8Ohm @ 1A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
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