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Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

RJK4006DPD-00#J2

POWER FIELD-EFFECT TRANSISTOR

Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Active

Price available on request

MOQ: 113 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelRJK4006DPD-00#J2
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)400 V
Rds On (Max)800mOhm @ 4A, 10V
Gate Charge (Qg)20 nC @ 10 V
Input Capacitance (Ciss)620 pF @ 25 V
Power Dissipation (Max)65W (Tc)
Drive Voltage10V
Supplier Device PackageMP-3A
RoHSRoHS
Part StatusActive

Application & Notes

RJK4006DPD-00#J2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 400 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 800mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
Power Dissipation (Max)65W (Tc)
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Drain to Source Voltage (Vdss)400 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Ta)

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