RJK2055DPA-WS#J0
MOSFET N-CH 200V 20A 8WPAK
Transistors Fets Mosfets Single
8-PowerWDFN
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJK2055DPA-WS#J0 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 69mOhm @ 10A, 10V |
| Vgs(th) (Max) | 4.5V @ 1mA |
| Gate Charge (Qg) | 38 nC @ 10 V |
| Input Capacitance (Ciss) | 2400 pF @ 25 V |
| Power Dissipation (Max) | 30W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-WPAK (3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK2055DPA-WS#J0 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 69mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK2055DPA-WS#J0
Alternatives & Replacements
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FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 10A, 10V |
| Power Dissipation (Max) | 30W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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