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Renesas Electronics America IncTO-220-3RoHS

RJK0703DPN-A0#T2

MOSFET N-CH 75V 70A TO220ABA

RJK0703DPN-A0#T2 by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelRJK0703DPN-A0#T2
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature150°C
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)6.7mOhm @ 35A, 10V
Vgs(th) (Max)4V @ 1mA
Gate Charge (Qg)56 nC @ 10 V
Input Capacitance (Ciss)4150 pF @ 10 V
Power Dissipation (Max)125W (Ta)
Drive Voltage10V
Supplier Device PackageTO-220ABA
RoHSRoHS
Part StatusActive

Application & Notes

RJK0703DPN-A0#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.7mOhm @ 35A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 1mA
Rds On (Max) @ Id, Vgs6.7mOhm @ 35A, 10V
Power Dissipation (Max)125W (Ta)
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C70A (Ta)

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