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Renesas Electronics America Inc8-PowerWDFNRoHS

RJK03M5DNS-00#J5

MOSFET N-CH 30V 25A 8HWSON

RJK03M5DNS-00#J5 by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerWDFN

Status

Active

Price available on request

MOQ: 5000 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
ModelRJK03M5DNS-00#J5
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)6.3mOhm @ 12.5A, 10V
Gate Charge (Qg)10.4 nC @ 4.5 V
Input Capacitance (Ciss)1890 pF @ 10 V
Power Dissipation (Max)15W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-HWSON (3.3x3.3)
RoHSRoHS
Part StatusActive

Application & Notes

RJK03M5DNS-00#J5 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.3mOhm @ 12.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs6.3mOhm @ 12.5A, 10V
Power Dissipation (Max)15W (Tc)
Gate Charge (Qg) (Max) @ Vgs10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1890 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Ta)

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