RJH60M3DPP-M0#T2
IGBT 600V 35A 39.7W TO-220FL
Transistors Igbts Single
TO-220-3 Full Pack
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJH60M3DPP-M0#T2 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 39.7 W |
| Supplier Device Package | TO-220FL |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJH60M3DPP-M0#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH60M3DPP-M0#T2
Alternatives & Replacements
View All →FGPF70N30
IGBT 300V 52W TO220F
IRG4IBC20UDPBF
IGBT, 11.4A, 600V, N-CHANNEL
SGS13N60UFDTU
IGBT, 13A, 600V, N-CHANNEL
FGPF4536
INSULATED GATE BIPOLAR TRANSISTO
SGS10N60RUFDTU
INSULATED GATE BIPOLAR TRANSISTO
IRG4IBC10UDPBF
IGBT 600V 6.8A 25W TO220FP
All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 60 nC |
| Power - Max | 39.7 W |
| Test Condition | 300V, 17A, 5Ohm, 15V |
| Switching Energy | 290µJ (on), 290µJ (off) |
| Td (on/off) @ 25°C | 38ns/90ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 17A |
| Reverse Recovery Time (trr) | 90 ns |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.