RJH60F6DPQ-A0#T0
IGBT 600V 85A 297.6W TO247A
Transistors Igbts Single
TO-247-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJH60F6DPQ-A0#T0 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 297.6 W |
| Supplier Device Package | TO-247A |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJH60F6DPQ-A0#T0 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH60F6DPQ-A0#T0
Alternatives & Replacements
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IGBT W/ULTRA-LOW VF DIODE FOR IN
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IGBT 20A 1200V TO-247
IRG7PH35UD1MPBF
IGBT W/ULTRA-LOW VF DIODE FOR IN
IRGP4263DPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
FGH20N6S2D
N-CHANNEL IGBT
All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Power - Max | 297.6 W |
| Test Condition | 400V, 30A, 5Ohm, 15V |
| Td (on/off) @ 25°C | 58ns/131ns |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 15V, 45A |
| Reverse Recovery Time (trr) | 90 ns |
| Current - Collector (Ic) (Max) | 85 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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