RJH60D7BDPQ-E0#T2
IGBT 600V 90A 300W TO-247
Transistors Igbts Single
TO-247-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJH60D7BDPQ-E0#T2 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 300 W |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJH60D7BDPQ-E0#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH60D7BDPQ-E0#T2
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 125 nC |
| Power - Max | 300 W |
| Test Condition | 300V, 50A, 5Ohm, 15V |
| Switching Energy | 700µJ (on), 1.4mJ (off) |
| Td (on/off) @ 25°C | 60ns/180ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 50A |
| Reverse Recovery Time (trr) | 25 ns |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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