Renesas Electronics America IncSC-83RoHS
RJH60D3DPE-00#J3
IGBT 600V 35A LDPAK
Category
Subcategory
Transistors Igbts Single
Package
SC-83
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJH60D3DPE-00#J3 |
| Package / Case | SC-83 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 113 W |
| Supplier Device Package | LDPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJH60D3DPE-00#J3 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-83 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH60D3DPE-00#J3
Alternatives & Replacements
View All →Renesas Electronics America IncStockSC-83
RJH60M1DPE-00#J3
IGBT 600V 16A 52W LDPAK
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Renesas Electronics America IncStockSC-83
RJP60D0DPE-00#J3
IGBT 600V 45A 122W LDPAK
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Renesas Electronics America IncStockSC-83
RJH60A83RDPE-00#J3
IGBT 600V 20A 52W LDPAK
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Renesas Electronics America IncStockSC-83
RJH60D1DPE-00#J3
IGBT 600V 20A 52W LDPAK
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 37 nC |
| Power - Max | 113 W |
| Test Condition | 300V, 17A, 5Ohm, 15V |
| Switching Energy | 200µJ (on), 210µJ (off) |
| Td (on/off) @ 25°C | 35ns/80ns |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 17A |
| Reverse Recovery Time (trr) | 100 ns |
| Current - Collector (Ic) (Max) | 35 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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