RJH60A83RDPD-A0#J2
IGBT 600V 10A
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJH60A83RDPD-A0#J2 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 51 W |
| Supplier Device Package | TO-252 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJH60A83RDPD-A0#J2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH60A83RDPD-A0#J2
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 19.7 nC |
| Power - Max | 51 W |
| Test Condition | 300V, 10A, 5Ohm, 15V |
| Switching Energy | 230µJ (on), 160µJ (off) |
| Td (on/off) @ 25°C | 31ns/54ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 10A |
| Reverse Recovery Time (trr) | 130 ns |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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