RJH1CV7DPQ-E0#T2
RJH1CV7DPQ - IGBT 1200V 70A
Transistors Igbts Single
TO-247-3
Obsolete
Price available on request
MOQ: 46 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJH1CV7DPQ-E0#T2 |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 320 W |
| Supplier Device Package | TO-247 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJH1CV7DPQ-E0#T2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJH1CV7DPQ-E0#T2
Alternatives & Replacements
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IRG7PH35UD1MPBF
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IGBT W/ULTRAFAST SOFT RECOVERY D
FGH20N6S2D
N-CHANNEL IGBT
All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 166 nC |
| Power - Max | 320 W |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Switching Energy | 3.2mJ (on), 2.5mJ (off) |
| Td (on/off) @ 25°C | 53ns/185ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 35A |
| Reverse Recovery Time (trr) | 200 ns |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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