RFW2N06RLE
N-CHANNEL POWER MOSFET
Transistors Fets Mosfets Single
4-DIP (0.300", 7.62mm)
Active
$1.66 / unit (market reference)
MOQ: 181 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RFW2N06RLE |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 200mOhm @ 2A, 5V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 10 V |
| Input Capacitance (Ciss) | 535 pF @ 25 V |
| Power Dissipation (Max) | 1.09W (Tc) |
| Drive Voltage | 5V |
| Supplier Device Package | 4-DIP, Hexdip |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RFW2N06RLE by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-DIP (0.300", 7.62mm) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 2A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RFW2N06RLE
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | +10V, -5V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 2A, 5V |
| Power Dissipation (Max) | 1.09W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 535 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
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